NTD18N06LT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTD18N06LT4G
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 55 W 60 V Continuous Drain Current (ID):18 A 11 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 54 mΩ |
| Height | 2.38 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 18 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 55 W |
| Power Dissipation | 55 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 675 pF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 65 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 9.9 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Fall Time | 38 ns |
| Rise Time | 79 ns |
| Gate Charge | 11 nC |
| Drain to Source Resistance | 54 mΩ |
| Gate to Source Voltage (Vgs) | 15 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
Stock: 2013
Distributors
pcbx
pcbxUnit Price$1.07585
Ext.Price$1.07585
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.07585 | $1.07585 |
| 10 | $0.68387 | $6.83870 |
| 25 | $0.59852 | $14.96300 |
| 50 | $0.52382 | $26.19100 |
| 100 | $0.45845 | $45.84500 |
| 300 | $0.40719 | $122.15700 |
| 500 | $0.36165 | $180.82500 |
| 1000 | $0.33052 | $330.52000 |